收藏本站
MMBF2201N, NVF2201N
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 10 m A)
Zero Gate Voltage Drain Current
(V DS = 16 Vdc, V GS = 0 Vdc)
(V DS = 16 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
20
?
?
?
?
?
?
?
?
1.0
10
± 100
Vdc
m Adc
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Static Drain ? to ? Source On ? Resistance
(V GS = 10 Vdc, I D = 300 mAdc)
(V GS = 4.5 Vdc, I D = 100 mAdc)
Forward Transconductance (V DS = 10 Vdc, I D = 200 mAdc)
V GS(th)
r DS(on)
g FS
1.0
?
?
?
1.7
0.75
1.0
450
2.4
1.0
1.4
?
Vdc
W
mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V DS = 5.0 V)
(V DS = 5.0 V)
(V DG = 5.0 V)
C iss
C oss
C rss
?
?
?
45
25
5.0
?
?
?
pF
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(on)
?
2.5
?
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 15 Vdc, I D = 300 mAdc,
R L = 50 W )
t r
t d(off)
t f
?
?
?
2.5
15
0.8
?
?
?
Gate Charge (See Figure 5)
Q T
?
1400
?
pC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 3)
I S
I SM
V SD
?
?
?
?
?
0.85
0.3
0.75
?
A
V
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
TYPICAL CHARACTERISTICS
1.0
1.6
0.9
0.8
0.7
V GS = 4 V
1.4
1.2
V GS = 4.5 V
0.6
0.5
0.4
0.3
0.2
0.1
V GS = 3.5 V
V GS = 3 V
V GS = 2.5 V
1.0
0.8
0.6
0.4
0.2
I D = 100 mA
V GS = 10 V
I D = 300 mA
0
0
0
1
2 3
4
5 6
7
8
9
10
- 60 - 40 - 20
0
20 40 60 80
100 120 140 160
V DS , DRAIN - SOURCE VOLTAGE (VOLTS)
Figure 1. Typical Drain Characteristics
http://onsemi.com
2
TEMPERATURE ( ° C)
Figure 2. On Resistance versus Temperature
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
MMBF2202PT1 MOSFET P-CH 20V 300MA SOT-323
MMDF1N05ER2G MOSFET N-CHAN DUAL 2A 50V 8SOIC
MMDF2C03HDR2G MOSFET N/P-CHAN 2A 30V 8SOIC
MMDF2N02ER2G MOSFET N-CHAN DUAL 2A 25V 8SOIC
MMDF2P02ER2G MOSFET PWR P-CH 25V 2.5A 8-SOIC
MMDF2P02HDR2G MOSFET P-CH DUAL 3.3A 20V 8SOIC
MMDF3N02HDR2G MOSFET PWR P-CH 20V 3.8A 8-SOIC
MMDF3N04HDR2G MOSFET N-CH DUAL 3.4A 40V 8SOIC
相关代理商/技术参数
MMBF2201NT1_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323
MMBF2201NT1G 功能描述:MOSFET 20V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MMBF2201PT1 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
MMBF2202PT1 功能描述:MOSFET 20V 300mA P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MMBF2202PT1_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
MMBF2202PT1G 功能描述:MOSFET 20V 300mA P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MMBF2202PT3 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
MMBF4091 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel